Functionalized one-dimensional wires and their interconnections

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Many device scientists believe that current Ultra Large Scale Integration (ULSI) technology will face technical and economic difficulties in further miniaturization. It has been proposed that 1-dimensional (I-D) transistors with connecting wires and three-dimensionally stacked structures-may replace current field effect transistors with planar integration structures. We propose a new scheme to fabricate and integrate I-D active devices. As a first step, we show the way to form I-D wires with spatially variable electronic structures and the way to characterize them.
Publisher
INST PURE APPLIED PHYSICS
Issue Date
2003-07
Language
English
Article Type
Article; Proceedings Paper
Keywords

NANOWIRE BUILDING-BLOCKS; CARBON NANOTUBES; LOGIC GATES; METALLOFULLERENES; ELECTRONICS; TRANSISTOR; GROWTH

Citation

JAPANESE JOURNAL OF APPLIED PHYSICS, v.42, pp.4780 - 4782

ISSN
0021-4922
DOI
10.1143/JJAP.42.4780
URI
http://hdl.handle.net/10203/80509
Appears in Collection
PH-Journal Papers(저널논문)
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