Investigation of gate-induced drain leakage (GIDL) current in thin body devices: Single-gate ultra-thin body, symmetrical double-gate, and asymmetrical double-gate MOSFETs

Abstract

Gate-induced drain leakage (GIDL) current is investigated in single-gate (SG) ultra-thin body field effect transistor (FET), symmetrical double-gate (DG) FinFET, and asymmetrical DG metal oxide semiconductor field effect transistor (MOSFET) devices. Measured reductions in GIDL current for SG and DG thin-body devices are reported for the first time. The thin-body devices exhibit much lower GIDL current than bulk-Si MOSFETs, and the GIDL is found to decrease with decreasing body thickness. these results can be explained by the reduction in transverse electric field at the surface of the drain and the increase in transverse effective mass with decreasing body thickness.