DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeon, Y | ko |
dc.contributor.author | Kim, DG | ko |
dc.contributor.author | No, Kwangsoo | ko |
dc.contributor.author | Kim, SJ | ko |
dc.contributor.author | Chung, J | ko |
dc.date.accessioned | 2008-11-19T01:57:20Z | - |
dc.date.available | 2008-11-19T01:57:20Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2000-05 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.39, no.5A, pp.2705 - 2709 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10203/7857 | - |
dc.description.abstract | We fabricated Pt bottom electrodes on SiO2/Si and ZrO2/SiO2/Si substrates by DC magnetron sputtering. The residual stress of the Pt layers deposited on SiO2 and ZrO2/SiO2 diffusion barrier layers was measured by an X-ray diffractometer (XRD). The Pt layers deposited at 400 degrees C exhibited tensile residual stress, but the Pt layers deposited at room temperature exhibited compressive residual stress. Lead zirconate titanate (PZT) thick films were fabricated on the Pt electrodes by a screen printing method. The dielectric permittivity, tan delta, P-E hysteresis loop, breakdown field, coercive field and piezoelectric constant were measured for the PZT thick films. A PZT thick film on Pt/ZrO2/SiO2/Si displaying a low tensile residual stress exhibited the remanent polarization, coercive held, dielectric permittivity (epsilon(r)), dissipation factor (tan delta), breakdown field and piezoelectric constant (d(33)) of 13 mu C/cm(2), 8.5 kV/cm, 800, 0.015, 12 MV/m and 343 mu C/N, respectively. | - |
dc.description.sponsorship | Ministry of Science and Technology (MOST), Ministry of Commerce, Industry and Energy (MOCIE)and Samsung Electronics Inc. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | JAPAN J APPLIED PHYSICS | - |
dc.title | Residual stress analysis of Pt bottom electrodes on ZrO2/SiO2/Si and SiO2/Si substrates for Pb(ZrTi)O-3 thick films | - |
dc.type | Article | - |
dc.identifier.wosid | 000088909500048 | - |
dc.identifier.scopusid | 2-s2.0-0033705520 | - |
dc.type.rims | ART | - |
dc.citation.volume | 39 | - |
dc.citation.issue | 5A | - |
dc.citation.beginningpage | 2705 | - |
dc.citation.endingpage | 2709 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | No, Kwangsoo | - |
dc.contributor.nonIdAuthor | Jeon, Y | - |
dc.contributor.nonIdAuthor | Kim, DG | - |
dc.contributor.nonIdAuthor | Kim, SJ | - |
dc.contributor.nonIdAuthor | Chung, J | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | stress analysis | - |
dc.subject.keywordAuthor | Pt thin films | - |
dc.subject.keywordAuthor | diffusion barrier thin films | - |
dc.subject.keywordAuthor | PZT thick films | - |
dc.subject.keywordAuthor | ferroelectric properties | - |
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