Growth of epitaxial cubic SiC thin films using single source precursors

Abstract

Cubic SiC thin films have been grown on Si(100), Si(111), and Separation by Implanted Oxygen (SIMOX) Silicon On Insulator (SOI) substrates in the temperature range of 780 - 1000 degrees C using a single source precursors of diethylmethylsilane (DEMS), (CH3CH2)(2)-SiH(CH3), and Bis(trimethylsilyl) methane (BTMSM), [(CH3)(3)Si](2)-CH2. Crack-free epitaxial cubic SiC thin films were obtained on both carbonized and uncarbonized Si(111) substrates at 830 OC from DEMS and 900 degrees C with BTMSM. Highly oriented cubic SiC(100) thin films were also deposited on uncarbonized Si(100) surface at 1000 degrees C with DEMS. The growth temperature of DEMS was lowered to 900 degrees C on Si(100) when the substrate was initially carbonized at 830 degrees C with a supersonic jet of acetylene. Ploycrystalline cubic SiC thin films, however, were grown on SIMOX: Auger electron spectroscopy (AES) and ex situ by ellipsometry, x-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), and transmission electron microscopy (TEM).