Formation of a lead zirconate titanate (PZT)/Pt interfacial layer and structural changes in the Pt/Ti/SiO2/Si substrate during the deposition of PZT thin film by electron cyclotron resonance plasma-enhanced chemical vapor deposition

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Lead zirconate titanate (PZT) thin films were fabricated on Pt(70 nm)/Ti(100 nm)/SiO2/Si substrates at 470 degrees C by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR PECVD), A Pb-deficient interfacial layer approximately 25 nm thick was found between the PZT film and the Pt substrate by high magnification transmission electron microscopy (TEM) examination. It was concluded that the interfacial laver was produced by the short residence time of Pb oxide molecules on the Pt substrate during the early stage of the PZT film growth. During the deposition of PZT film, the Pt/Ti/SiO2/Si substrate was altered into the Pt/TiO2/Pt/TiO2/TiSi2/SiO2 structure. The structural change was attributed to the Ti out-diffusion into the Pt layer, the oxidation of Ti by the in-diffused oxygen, and the formation of TiO2/Ti-silicide by the reaction between the SiO2 and Ti layers.
Publisher
JAPAN J APPLIED PHYSICS
Issue Date
1997-01
Language
English
Article Type
Article
Citation

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.36, no.7, pp.4386 - 4391

ISSN
0021-4922
DOI
10.1143/JJAP.36.4386
URI
http://hdl.handle.net/10203/74671
Appears in Collection
MS-Journal Papers(저널논문)
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