DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho WK | ko |
dc.contributor.author | Cho iDH | ko |
dc.contributor.author | Kim, Moon Uhn | ko |
dc.date.accessioned | 2013-03-02T17:01:59Z | - |
dc.date.available | 2013-03-02T17:01:59Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1999-11 | - |
dc.identifier.citation | INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, v.42, no.22, pp.4143 - 4152 | - |
dc.identifier.issn | 0017-9310 | - |
dc.identifier.uri | http://hdl.handle.net/10203/74589 | - |
dc.description.abstract | An optimization procedure is devised to find the inlet velocity profile that yields as uniform an epitaxial layer as possible in a vertical MOCVD reactor. It involves the solution of fully elliptic equations of motion, temperature, and concentration; the process is highly nonlinear and has been efficiently treated by breaking it into a series of linear problems. The optimal profile approximated by a 6th-degree Chebyshev polynomial is very successful in reducing the spatial non-uniformity of the growth rate. The optimization is particularly effective when the Reynolds number is high and the inlet-to-wafer distance becomes large. It is also found that a properly constructed inlet velocity profile can suppress the buoyancy driven secondary flow and improve the growth-rate uniformity. (C) 1999 Elsevier Science Ltd. All rights reserved. | - |
dc.language | English | - |
dc.publisher | Pergamon-Elsevier Science Ltd | - |
dc.subject | STAGNATION POINT FLOW | - |
dc.subject | TRANSPORT PHENOMENA | - |
dc.subject | MOCVD REACTORS | - |
dc.subject | MOVPE GROWTH | - |
dc.title | Optimization of the inlet velocity profile for uniform epitaxial growth in a vertical metalorganic chemical vapor deposition reactor | - |
dc.type | Article | - |
dc.identifier.wosid | 000082111300006 | - |
dc.identifier.scopusid | 2-s2.0-0032833310 | - |
dc.type.rims | ART | - |
dc.citation.volume | 42 | - |
dc.citation.issue | 22 | - |
dc.citation.beginningpage | 4143 | - |
dc.citation.endingpage | 4152 | - |
dc.citation.publicationname | INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER | - |
dc.contributor.localauthor | Kim, Moon Uhn | - |
dc.contributor.nonIdAuthor | Cho WK | - |
dc.contributor.nonIdAuthor | Cho iDH | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | STAGNATION POINT FLOW | - |
dc.subject.keywordPlus | TRANSPORT PHENOMENA | - |
dc.subject.keywordPlus | MOCVD REACTORS | - |
dc.subject.keywordPlus | MOVPE GROWTH | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.