구리 흡착에 의한 비정질 실리콘 박막의 저온 결정화 거동

Abstract

Low-temperature crystallization of amorphous silicon (a-Si) films by adsorbing metal on the films was investigated. Amorphous Si films were deposited by low-pressure chemical vapor deposition, spin-coated by metal solutions and subsequently annealed in Ar atmosphere. Polycrystalline silicon (poly-Si) thin-film transistors (TFT) were fabricated using the annealed Si films with Cu adsorption. And the thermodynamic parameters were extracted by observing crystallization behaviors.