Programming Characteristics of P-Channel Si Nano-Crystal Memory

Abstract

In this work, the programming characteristics of p-channel nano-crystal memory is studied. The hole tunneling component from the inversion layer and the electron tunneling component from the valence band in the nano-crystal were separated successfully by independent measurement of the current at the body terminal and at the source/drain terminal of the memory. For small gate voltage, the hole tunneling current is dominant during programming. However, for large programming voltage, the valence band electron tunneling from the dot into the substrate becomes dominant. Finally, the comparison of retention characteristics between programmed holes and electrons shows that holes have longer retention time.