New fabrication process of single-crystalline silicon islands using double diffusion: Application to a heating resistor of a thermal inkjet printhead

Cited 2 time in webofscience Cited 0 time in scopus
  • Hit : 332
  • Download : 0
The n(+)-type silicon island was fabricated using double diffusion, selective anodization and oxidation of silicon. The island was applied as a heating resistor of a thermal inkjet printhead. The heating, resistor has good uniformity of +/-5% and good endurance of 10(8) cycles under electrical stresses. In the inkjet printhead structure, high-quality thermal oxide can be used as a passivation layer and a thick thermal barrier oxide under heating resistors can be easily achieved. The diameter of ejected ink dots with a nozzle diameter of 35 mu m was about 100 mu m. There were no satellites on the paper.
Publisher
JAPAN J APPLIED PHYSICS
Issue Date
1998-12
Language
English
Article Type
Article; Proceedings Paper
Keywords

OXIDIZED POROUS SILICON; SUBSTRATE

Citation

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.37, no.12B, pp.7100 - 7103

ISSN
0021-4922
DOI
10.1143/JJAP.37.7100
URI
http://hdl.handle.net/10203/69415
Appears in Collection
RIMS Journal Papers
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 2 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0