DC Field | Value | Language |
---|---|---|
dc.contributor.author | jin-woo lee | ko |
dc.contributor.author | nae-in lee | ko |
dc.contributor.author | sung-hoi hur | ko |
dc.contributor.author | chul-hi han | ko |
dc.date.accessioned | 2013-02-27T14:49:05Z | - |
dc.date.available | 2013-02-27T14:49:05Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1997-09 | - |
dc.identifier.citation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.144, no.9, pp.3283 - 3287 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.uri | http://hdl.handle.net/10203/69170 | - |
dc.description.abstract | Electron cyclotron resonance nitrous oxide (N2O) plasma oxidation has been investigated as a process to grow thin oxide on polycrystalline silicon and (100), (111), and (110) oriented crystalline silicon. In spite of a low thermal budget, N2O plasma oxidation incorporates nitrogen atoms at the silicon/silicon dioxide interface and forms a nitrogen-rich layer. The incorporated nitrogen atoms are tightly bound to silicon atoms at the interface with N (1s) electron energy of 397.8 eV. The oxidation rate in N2O plasma is less dependent on crystalline orientation in comparison with thermal O-2, and is therefore nearly identical in poly- and single-crystalline-Si. Polysilicon oxide (polyoxide) grown by N2O plasma oxidation exhibits better electrical properties than thermally grown oxides; this is attributed to the smooth interface between the polyoxide and a poly-Si film. Polysilicon thin film transistors fabricated with N2O plasma oxide show improved performance, which is attributed not only to the smooth interface but also to oxygen-and nitrogen-plasma passivation. | - |
dc.language | English | - |
dc.publisher | Electrochemical Soc Inc | - |
dc.subject | THERMAL-OXIDATION | - |
dc.subject | POLYSILICON | - |
dc.subject | INTERFACE | - |
dc.subject | ROUGHNESS | - |
dc.title | Oxidation of Silicon Using Electron Cyclotron Resonance Nitrous Oxide Plasma and Its Application to Polycrystalline Silicon Thin Film Transistors | - |
dc.type | Article | - |
dc.identifier.wosid | A1997XY20000072 | - |
dc.identifier.scopusid | 2-s2.0-0031233513 | - |
dc.type.rims | ART | - |
dc.citation.volume | 144 | - |
dc.citation.issue | 9 | - |
dc.citation.beginningpage | 3283 | - |
dc.citation.endingpage | 3287 | - |
dc.citation.publicationname | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.contributor.localauthor | chul-hi han | - |
dc.contributor.nonIdAuthor | jin-woo lee | - |
dc.contributor.nonIdAuthor | nae-in lee | - |
dc.contributor.nonIdAuthor | sung-hoi hur | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | THERMAL-OXIDATION | - |
dc.subject.keywordPlus | POLYSILICON | - |
dc.subject.keywordPlus | INTERFACE | - |
dc.subject.keywordPlus | ROUGHNESS | - |
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