DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kahng, SJ | ko |
dc.contributor.author | Park, JY | ko |
dc.contributor.author | Booh, KH | ko |
dc.contributor.author | Lee, Jhinhwan | ko |
dc.contributor.author | Khang, Y | ko |
dc.contributor.author | Kuk, Y | ko |
dc.date.accessioned | 2013-02-27T14:02:28Z | - |
dc.date.available | 2013-02-27T14:02:28Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1997 | - |
dc.identifier.citation | JOURNAL OF VACUUM SCIENCE TECHNOLOGY A-VACUUM SURFACES AND FILMS, v.15, no.3, pp.927 - 929 | - |
dc.identifier.issn | 0734-2101 | - |
dc.identifier.uri | http://hdl.handle.net/10203/68975 | - |
dc.description.abstract | Dynamically supplied atomic hydrogen was used for a surfactant growth of Ce on a Si(100) surface. The transition from three-dimensional to two-dimensional growth of Ge was observed as the hydrogen flux was increased to similar to 1 ML/s in scanning tunneling microscope images. Layer-by-layer growth was successfully achieved up to 5 ML of Ge in the presence of atomic hydrogen. Observed missing dimer rows, irregular trench structures, and new ''pin holes'' are believed to be the product of strain relieving mechanism. The layer-by-layer growth can be understood both by energetics and kinetic pathway arguments. (C) 1997 American Vacuum Society. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | MEDIATED EPITAXIAL-GROWTH | - |
dc.subject | SCANNING-TUNNELING-MICROSCOPY | - |
dc.subject | DIMER EXCHANGE | - |
dc.subject | STRAIN | - |
dc.subject | SURFACTANTS | - |
dc.subject | SI(100) | - |
dc.title | Effect of atomic hydrogen on the growth of Ge/Si(100) | - |
dc.type | Article | - |
dc.identifier.wosid | A1997XE73100088 | - |
dc.type.rims | ART | - |
dc.citation.volume | 15 | - |
dc.citation.issue | 3 | - |
dc.citation.beginningpage | 927 | - |
dc.citation.endingpage | 929 | - |
dc.citation.publicationname | JOURNAL OF VACUUM SCIENCE TECHNOLOGY A-VACUUM SURFACES AND FILMS | - |
dc.identifier.doi | 10.1116/1.580624 | - |
dc.contributor.localauthor | Lee, Jhinhwan | - |
dc.contributor.nonIdAuthor | Kahng, SJ | - |
dc.contributor.nonIdAuthor | Park, JY | - |
dc.contributor.nonIdAuthor | Booh, KH | - |
dc.contributor.nonIdAuthor | Khang, Y | - |
dc.contributor.nonIdAuthor | Kuk, Y | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordPlus | MEDIATED EPITAXIAL-GROWTH | - |
dc.subject.keywordPlus | SCANNING-TUNNELING-MICROSCOPY | - |
dc.subject.keywordPlus | DIMER EXCHANGE | - |
dc.subject.keywordPlus | STRAIN | - |
dc.subject.keywordPlus | SURFACTANTS | - |
dc.subject.keywordPlus | SI(100) | - |
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