THE EFFECTS OF DEPOSITION TEMPERATURE ON THE INTERFACIAL PROPERTIES OF SIH4 REDUCED BLANKET TUNGSTEN ON TIN GLUE LAYER

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Low pressure chemical vapor deposition tungsten films were deposited at various temperatures, using a WF6-SiH4-H-2 gas mixture. The impurity distribution at the W/TiN interface was investigated by Auger electron spectroscopy depth profiling. Some fluorine accumulation at the interface is observed when the tungsten is deposited below 300-degrees-C. However, above 300-degrees-C, no accumulation of fluorine could be observed. A result obtained from thermodynamic calculations using SOLGASMIX-PV suggests that this phenomenon is closely associated with the highly oxidized surface layer of TiN at the initial stage of deposition. The reaction of the gas mixture with the TiN surface layer seems to enhance the fluorine accumulation, which lowers the adherence of the interface and increases the contact resistance.
Publisher
MINERALS METALS MATERIALS SOC
Issue Date
1994-10
Language
English
Article Type
Article
Keywords

TITANIUM NITRIDE; FILMS

Citation

JOURNAL OF ELECTRONIC MATERIALS, v.23, no.10, pp.1075 - 1080

ISSN
0361-5235
DOI
10.1007/BF02650379
URI
http://hdl.handle.net/10203/67483
Appears in Collection
MS-Journal Papers(저널논문)RIMS Journal Papers
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