DC Field | Value | Language |
---|---|---|
dc.contributor.author | FOX, RM | ko |
dc.contributor.author | Lee, Sang-Gug | ko |
dc.contributor.author | ZWEIDINGER, DT | ko |
dc.date.accessioned | 2013-02-27T05:43:32Z | - |
dc.date.available | 2013-02-27T05:43:32Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1993-06 | - |
dc.identifier.citation | IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.28, no.6, pp.678 - 685 | - |
dc.identifier.issn | 0018-9200 | - |
dc.identifier.uri | http://hdl.handle.net/10203/66793 | - |
dc.description.abstract | This study demonstrates the circuit and device conditions under which self-heating can significantly affect bipolar junction transistor (BJT) circuit behavior. Simple quantitative measures are supplied that allow estimation of thermally induced errors in BJT small-signal parameters, based on knowledge of the transistor geometry and its Early voltage. It is shown that errors in output admittance and reverse transadmittance can be significant without much power dissipation, especially when the base and emitter driving impedances are small. Other small-signal parameters are less affected unless the power dissipation becomes significant. Thermal effects in large-signal dc analysis can be significant in precision analog circuits that depend on close transistor matching; such circuits can also exhibit long settling-time tails due to long thermal time constants. ECL delay is shown to be insensitive to self-heating. These effects are demonstrated through simulations of a variety of circuits using versions of SPICE modified to include physics-based models for thermal impedance. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | MODEL | - |
dc.title | THE EFFECTS OF BJT SELF-HEATING ON CIRCUIT BEHAVIOR | - |
dc.type | Article | - |
dc.identifier.wosid | A1993LH66500008 | - |
dc.type.rims | ART | - |
dc.citation.volume | 28 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 678 | - |
dc.citation.endingpage | 685 | - |
dc.citation.publicationname | IEEE JOURNAL OF SOLID-STATE CIRCUITS | - |
dc.identifier.doi | 10.1109/4.217983 | - |
dc.contributor.localauthor | Lee, Sang-Gug | - |
dc.contributor.nonIdAuthor | FOX, RM | - |
dc.contributor.nonIdAuthor | ZWEIDINGER, DT | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | MODEL | - |
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