TiSi2와 다결정 실리콘에 이온주입된 As계에서 TiAs침전물형성에 관한 고분해능 TEM 연구High-Resolution TEM Study on TiAs Precipitate Formation Between TiSi2 and As Doped in Poly-Silicon
- Publisher
- 대한전자공학회
- Issue Date
- 1991-12
- Language
- Korean
- Citation
전자공학회논문지, v.28, no.5, pp.375 - 379
- ISSN
- 1975-2377
- Appears in Collection
- MS-Journal Papers(저널논문)
- Files in This Item
- There are no files associated with this item.
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