Meltback Etching and Regrowth of GaAs/AlGaAs in Liquid Phase Epitaxy for Fabrication of Microlens

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Meltback etching was performed both on planar and selective areas. In the case of planar etching, we could see the effect of convection. Such a tendency was observed also for selective etching when the degree of undersaturation was large. By varying the mask opening area, composition of the melt, and etching time, a precise control of the etched shape was possible and a hemispherical shape was obtained. Large anisotropic meltback behavior was apparent when the melt contained no aluminium content. But as the added amount of aluminium was increased, the etched shape became circular. Regrowth characteristics showed gallium capturing phenomenon when the amount of supersaturated arsenic was large. By reducing the supersaturated arsenic content, a successful growth could be obtained.
Publisher
Springer
Issue Date
1993
Language
English
Article Type
Article
Keywords

LASERS; GAAS; SUBSTRATE; GROWTH; INP

Citation

JOURNAL OF ELECTRONIC MATERIALS, v.22, no.4, pp.353 - 359

ISSN
0361-5235
URI
http://hdl.handle.net/10203/64405
Appears in Collection
EE-Journal Papers(저널논문)
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