ME-Journal Papers(저널논문)

Recent Items

Collection's Items (Sorted by Submit Date in Descending order): 161 to 180 of 12327

161
Tensile strained direct bandgap GeSn microbridges enabled in GeSn-on-insulator substrates with residual tensile strain

Burt, Daniel; Zhang, Lin; Jung, Yongduck; Joo, Hyo-jun; Kim, Youngmin; Chen, Melvina; Son, Bongkwon; et al, OPTICS LETTERS, v.48, no.3, pp.735 - 738, 2023-02

162
Extended-SWIR GeSn LEDs with Reduced Footprint and Efficient Operation Power

Atalla, Mahmoud R. M.; Kim, Youngmin; Assali, Simone; Burt, Daniel; Nam, Donguk; Moutanabbir, Oussama, ACS PHOTONICS, v.10, no.5, pp.1649 - 1653, 2023-04

163
A two-dimensional mid-infrared optoelectronic retina enabling simultaneous perception and encoding

Wang, Fakun; Hu, Fangchen; Dai, Mingjin; Zhu, Song; Sun, Fangyuan; Duan, Ruihuan; Wang, Chongwu; et al, NATURE COMMUNICATIONS, v.14, no.1, 2023-04

164
GeSn/Ge Multiquantum-Well Vertical-Cavity Surface-Emitting p-i-n Structures and Diode Emitters on a 200 mm Ge-on-Insulator Platform

Chen, Qimiao; Jung, Yongduck; Zhou, Hao; Wu, Shaoteng; Gong, Xiao; Huang, Yi-Chiau; Lee, Kwang Hong; et al, ACS PHOTONICS, v.10, no.6, pp.1716 - 1725, 2023-05

165
Strong second-harmonic generation by sublattice polarization in non-uniformly strained monolayer graphene

Lu, Kunze; Luo, Manlin; Gao, Weibo; Wang, Qi Jie; Sun, Hao; Nam, Donguk, NATURE COMMUNICATIONS, v.14, no.1, 2023-05

166
High-Precision Wavelength Tuning of GeSn Nanobeam Lasers via Dynamically Controlled Strain Engineering

Kim, Youngmin; Joo, Hyo-Jun; Chen, Melvina; Son, Bongkwon; Burt Daniel; Shi Xuncheng; Zhang Lin; et al, ADVANCED SCIENCE, v.10, no.17, 2023-06

167
Short-wave infrared cavity resonances in a single GeSn nanowire

Kim, Youngmin; Assali, Simone; Joo, Hyo-Jun; Koelling, Sebastian; Chen, Melvina; Luo, Lu; Shi, Xuncheng; et al, NATURE COMMUNICATIONS, v.14, no.1, 2023-07

168
Enhanced second-harmonic generation in strained germanium-on-insulator microdisks for integrated quantum photonic technologies

Tan, James; Shi, Xuncheng; Lu, Kunze; Joo, Hyo-Jun; Kim, Youngmin; Chen, Melvina; Zhang, Lin; et al, OPTICS LETTERS, v.48, no.16, pp.4269 - 4271, 2023-08

169
Laser-induced graphene formation on recycled woods for green smart furniture

Nam, Han Ku; Choi, Jungrak; Jing, Tongmei; Yang, Dongwook; Lee, Younggeun; Kim, Young‐Ryeul; Le, Truong‐Son Dinh; et al, ECOMAT, v.6, no.4, 2024-04

170
Fluorine passivation of vacancy defects in bulk germanium for Ge metal-oxide-semiconductor field-effect transistor application

Jung, Woo-Shik; Park, Jin-Hong; Nainani, Aneesh; Nam, Donguk; Saraswat, Krishna C., APPLIED PHYSICS LETTERS, v.101, no.7, 2012-08

171
Strain-Induced Pseudoheterostructure Nanowires Confining Carriers at Room Temperature with Nanoscale-Tunable Band Profiles

Nam, Donguk; Sukhdeo, David S.; Kang, Ju-Hyung; Petykiewicz, Jan; Lee, Jae Hyung; Jung, Woo Shik; Vuckovic, Jelena; et al, NANO LETTERS, v.13, no.7, pp.3118 - 3123, 2013-07

172
Theoretical Analysis of GeSn Alloys as a Gain Medium for a Si-Compatible Laser

Dutt, Birendra; Lin, Hai; Sukhdeo, Devanand S.; Vulovic, Boris M.; Gupta, Suyog; Nam, Donguk; Saraswat, Krishna C.; et al, IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, v.19, no.5, 2013-09

173
Study of Carrier Statistics in Uniaxially Strained Ge for a Low-Threshold Ge Laser

Nam, Donguk; Sukhdeo, David S.; Gupta, Shashank; Kang, Ju-Hyung; Brongersma, Mark L.; Saraswat, Krishna C., IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, v.20, no.4, 2014-07

174
Observation of improved minority carrier lifetimes in high-quality Ge-on-insulator using time-resolved photoluminescence

Nam, Donguk; Kang, Ju-Hyung; Brongersma, Mark L.; Saraswat, Krishna C., OPTICS LETTERS, v.39, no.21, pp.6205 - 6208, 2014-11

175
Monolithic integration of germanium-on-insulator p-i-n photodetector on silicon

Nam, Ju Hyung; Afshinmanesh, Farzaneh; Nam, Donguk; Jung, Woo Shik; Kamins, Theodore I.; Brongersma, Mark L.; Saraswat, Krishna C., OPTICS EXPRESS, v.23, no.12, pp.15816 - 15823, 2015-06

176
Bandgap-customizable germanium using lithographically determined biaxial tensile strain for silicon-compatible optoelectronics

Sukhdeo, David S.; Nam, Donguk; Kang, Ju-Hyung; Brongersma, Mark L.; Saraswat, Krishna C., OPTICS EXPRESS, v.23, no.13, pp.16740 - 16749, 2015-06

177
Ge microdisk with lithographically-tunable strain using CMOS-compatible process

Sukhdeo, David S.; Petykiewicz, Jan; Gupta, Shashank; Kim, Daeik; Woo, Sungdae; Kim, Youngmin; Vuckovic, Jelena; et al, OPTICS EXPRESS, v.23, no.26, pp.33249 - 33254, 2015-12

178
Impact of minority carrier lifetime on the performance of strained germanium light sources

Sukhdeo, David S.; Gupta, Shashank; Saraswat, Krishna C.; Dutt, Birendra (Raj); Nam, Donguk, OPTICS COMMUNICATIONS, v.364, pp.233 - 237, 2016-04

179
Direct Bandgap Light Emission from Strained Germanium Nanowires Coupled with High-Q Nanophotonic Cavities

Petykiewicz, Jan; Nam, Donguk; Sukhdeo, David S.; Gupta, Shashank; Buckley, Sonia; Piggott, Alexander Y.; Vuckovic, Jelena; et al, NANO LETTERS, v.16, no.4, pp.2168 - 2173, 2016-04

180
Theoretical Modeling for the Interaction of Tin Alloying With N-Type Doping and Tensile Strain for GeSn Lasers

Sukhdeo, David; Kim, Yeji; Gupta, Shashank; Saraswat, Krishna; Dutt, Birendra; Nam, Donguk, IEEE ELECTRON DEVICE LETTERS, v.37, no.10, pp.1307 - 1310, 2016-10

Discover

Type

Open Access

Date issued

. next

Subject

. next

rss_1.0 rss_2.0 atom_1.0