Search
Results 1-10 of 91 (Search time: 0.008 seconds).
| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Chemical bonding effect of Ge atoms on B diffusion in Si Bang, J; Kang, J; Lee, WJ; Chang, Kee-Joo; Kim, H, PHYSICAL REVIEW B, v.76, pp.064118 - 064118, 2007-08 | |
| Spectral properties of incommensurate double-walled carbon nanotubes Ahn, KH; Kim, Yong-Hyun; Wiersig, J; Chang, Kee-Joo, PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, v.22, pp.666 - 669, 2004-04 | |
| Structural transformation in the formation of H-induced (111) platelets in Si Kim, YS; Chang, Kee-Joo, PHYSICAL REVIEW LETTERS, v.86, no.9, pp.1773 - 1776, 2001-02 | |
| Dielectric-screening properties and Coulomb pseudopotential mu(*) for MgB2 Moon, CY; Kim, Yong-Hyun; Chang, Kee-Joo, PHYSICAL REVIEW B, v.70, pp.104522 - 104522, 2004-09 | |
| First-principles study of the electronic structure of aluminate nanotubes Ryu B.; Kang Y.-J.; Chang, Kee-Joo, JOURNAL OF PHYSICS: CONFERENCE SERIES, v.61, no.1, pp.195 - 199, 2007-04 | |
| Electrical transport properties of nanoscale devices based on carbon nanotubes Kang, Joon Goo; Kim, Yong-Hoon; Chang, Kee-Joo, CURRENT APPLIED PHYSICS, v.9, no.11, pp.S7 - S11, 2009-01 | |
| Compensation mechanism for N acceptors in ZnO Lee, EC; Kim, YS; Jin, YG; Chang, Kee-Joo, PHYSICAL REVIEW B, v.64, no.8, pp.085120 - 085120, 2001-08 | |
| Formation of Dopant-Pair Defects and Doping Efficiency in B- and P-Doped Silicon Nanowires Moon, CY; Lee, WJ; Chang, Kee-Joo, NANO LETTERS, v.8, pp.3086 - 3091, 2008-10 | |
| Physical origin of threshold voltage problems in polycrystalline silicon/HfO2 gate stacks Kim, DY; Kang, JG; Chang, Kee-Joo, APPLIED PHYSICS LETTERS, v.88, no.16, pp.162107 - 162107, 2006-04 | |
| Charge-transition levels of oxygen vacancy as the origin of device instability in HfO2 gate stacks through quasiparticle energy calculations Choi, Eun-Ae; Chang, Kee-Joo, APPLIED PHYSICS LETTERS, v.94, no.12, pp.122901 - 122901, 2009-03 |
Discover
Type
- 91 Article