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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Stability and Segregation of B and P Dopants in Si/SiO2 Core-Shell Nanowires Kim, Sung-Hyun; Park, Ji-Sang; Chang, Kee-Joo, NANO LETTERS, v.12, no.10, pp.5068 - 5073, 2012-10 | |
| First-principles study of the segregation of boron dopants near the interface between crystalline Si and amorphous SiO2 Oh, Young-Jun; Noh, Hyeon-Kyun; Chang, Kee-Joo, PHYSICA B-CONDENSED MATTER, v.407, no.15, pp.2989 - 2992, 2012-08 | |
| Effect of Dimensionality on the Localization Behavior in Hydrogenated Graphene Systems Choe, Duk-Hyun; Chang, Kee-Joo, NANO LETTERS, v.12, no.10, pp.5175 - 5180, 2012-10 | |
| Effect of O-vacancy defects on the Schottky barrier heights in Ni/SiO2 and Ni/HfO2 interfaces Noh, Hyeon-Kyun; Oh, Young-Jun; Chang, Kee-Joo, PHYSICA B-CONDENSED MATTER, v.407, no.15, pp.2907 - 2910, 2012-08 | |
| Diffusion and Stability of Hydrogen in Mg-Doped GaN: A Density Functional Study Park, Ji-Sang; Chang, Kee-Joo, APPLIED PHYSICS EXPRESS, v.5, no.6, pp.065601 - 065601, 2012-06 | |
| Carrier-mediated long-range ferromagnetism in electron-doped Fe-C-4 and Fe-N-4 incorporated graphene Lee, Alex Taekyung; Kang, Joon-Goo; Wei, Su-Huai; Chang, Kee-Joo; Kim, Yong-Hyun, PHYSICAL REVIEW B, v.86, no.16, pp.165403 - 165403, 2012-10 | |
| Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors Noh, Hyeon-Kyun; Chang, Kee-Joo; Ryu, Byung-Ki; Lee, Woo-Jin, PHYSICAL REVIEW B, v.84, no.11, pp.115205 - 115205, 2011-09 | |
| Defects responsible for the Fermi level pinning in n(+) poly-Si/HfO2 gate stacks Ryu, Byung-Ki; Chang, Kee-Joo, APPLIED PHYSICS LETTERS, v.97, no.24, pp.242910, 2010-12 | |
| O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors Ryu, Byung-Ki; Noh, Hyeon-Kyun; Choi, Eun-Ae; Chang, Kee-Joo, APPLIED PHYSICS LETTERS, v.97, no.2, pp.022108 - 022108, 2010-07 | |
| Enhanced electron-mediated ferromagnetism in Co-doped ZnO nanowires Choi, Eun-Ae; Lee, Woo-Jin; Chang, Kee-Joo, JOURNAL OF APPLIED PHYSICS, v.108, no.2, pp.023904 - 023904, 2010-07 |
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