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Results 31-40 of 248 (Search time: 0.008 seconds).
| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Invariant-molecular-dynamics study of the diamond-to-beta-Sn transition in Si under hydrostatic and uniaxial compressions Lee, IH; Jeong, JW; Chang, Kee-Joo, PHYSICAL REVIEW B, v.55, no.9, pp.5689 - 5693, 1997-03 | |
| A first-principles study of carbon impurities in GaAs and InAs Chang, Kee-Joo; Lee, SG; Cheong, BH, MATERIALS SCIENCE FORUM, v.196-201, pp.803 - 807, 1995-11 | |
| STRUCTURE AND STABILITY OF THE DX-CENTERS IN GAAS AND INP Chang, Kee-Joo; CHEONG, BH, MODERN PHYSICS LETTERS B, v.9, no.9, pp.511 - 530, 1995-04 | |
| Carrier-mediated long-range ferromagnetism in electron-doped Fe-C-4 and Fe-N-4 incorporated graphene Lee, Alex Taekyung; Kang, Joon-Goo; Wei, Su-Huai; Chang, Kee-Joo; Kim, Yong-Hyun, PHYSICAL REVIEW B, v.86, no.16, pp.165403 - 165403, 2012-10 | |
| First-principles study of the equilibrium structures of Si-n clusters Jeong, JW; Lee, IH; Oh, JH; Chang, Kee-Joo, JOURNAL OF PHYSICS-CONDENSED MATTER, v.10, no.26, pp.5851 - 5860, 1998-07 | |
| A FIRST-PRINCIPLES STUDY OF LI-METAL ADSORPTION ON A SI(100) SURFACE KO, YJ; Chang, Kee-Joo; YI, JY, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.28, pp.101 - 104, 1995-02 | |
| First-principles study of the self-interstitial diffusion mechanism in silicon Lee, WC; Lee, SG; Chang, Kee-Joo, JOURNAL OF PHYSICS-CONDENSED MATTER, v.10, no.5, pp.995 - 1002, 1998-02 | |
| Compensation mechanism for N acceptors in ZnO Lee, EC; Kim, YS; Jin, YG; Chang, Kee-Joo, PHYSICAL REVIEW B, v.64, no.8, pp.085120 - 085120, 2001-08 | |
| Formation of Dopant-Pair Defects and Doping Efficiency in B- and P-Doped Silicon Nanowires Moon, CY; Lee, WJ; Chang, Kee-Joo, NANO LETTERS, v.8, pp.3086 - 3091, 2008-10 | |
| Physical origin of threshold voltage problems in polycrystalline silicon/HfO2 gate stacks Kim, DY; Kang, JG; Chang, Kee-Joo, APPLIED PHYSICS LETTERS, v.88, no.16, pp.162107 - 162107, 2006-04 |
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