Showing results 1 to 4 of 4
Ab initio study of boron segregation and deactivation at Si/SiO2 interface Oh, Young-Jun; Hwang, Jin-Heui; Noh, Hyeon-Kyun; Bang, Jun-Hyeok; Ryu, Byung-Ki; Chang, Kee-Joo, MICROELECTRONIC ENGINEERING, v.89, pp.120 - 123, 2012-01 |
Effect of O-vacancy defects on the Schottky barrier heights in Ni/SiO2 and Ni/HfO2 interfaces Noh, Hyeon-Kyun; Oh, Young-Jun; Chang, Kee-Joo, PHYSICA B-CONDENSED MATTER, v.407, no.15, pp.2907 - 2910, 2012-08 |
First-principles study of the segregation of boron dopants near the interface between crystalline Si and amorphous SiO2 Oh, Young-Jun; Noh, Hyeon-Kyun; Chang, Kee-Joo, PHYSICA B-CONDENSED MATTER, v.407, no.15, pp.2989 - 2992, 2012-08 |
Hybrid functional versus quasiparticle calculations for the Schottky barrier and effective work function at TiN/HfO2 interface Oh, Young-Jun; Lee, Alex Taekyung; Noh, Hyeon-Kyun; Chang, Kee-Joo, PHYSICAL REVIEW B, v.87, no.7, pp.075325, 2013-02 |
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