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Results 1-10 of 12 (Search time: 0.009 seconds).
| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| THE EFFECT OF IN-SITU BORON DOPING ON THE STRAIN RELAXATION OF SI0.8GE0.2-B/SI HETEROSTRUCTURE GROWN BY MOLECULAR-BEAM EPITAXY LEE, SC; YUN, SJ; Lee, JeongYong, JOURNAL OF CRYSTAL GROWTH, v.150, no.1-4, pp.999 - 1004, 1995-05 | |
| Preparation of room-temperature photoluminescent nanoparticles by ultrafast laser processing of single-crystalline Ge Jeoung, SC; Kim, HS; Park, MI; Lee, J; Kim, CS; Park, Chong-Ook, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.44, no.7A, pp.5278 - 5281, 2005-07 | |
| Sub-Nanometer Level Size Tuning of a Monodisperse Nanoparticle Array Via Block Copolymer Lithography Shin, Dong-Ok; Lee, Duck-Hyun; Moon, Hyoung-Seok; Jeong, Seong-Jun; Kim, Ju-Young; Mun, Jeong-Ho; Cho, Hee-Sook; Park, Soo-Jin; Kim, Sang-Ouk, ADVANCED FUNCTIONAL MATERIALS, v.21, no.2, pp.250 - 254, 2011-01 | |
| A Facile Way to Control the Number of Walls in Carbon Nanotubes through the Synthesis of Exposed-Core/Shell Catalyst Nanoparticles Choi, Kyung-Min; Augustine, Saji; Choi, Jung-Hoon; Lee, Ju-Ho; Shin, Weon-Ho; Yang, Seong-Ho; Lee, Jeong-Yong; Kang, Jeung-Ku, ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, v.47, no.51, pp.9904 - 9907, 2008 | |
| Characterization of TiN barriers against Cu diffusion by capacitance-voltage measurement Rha, SK; Lee, SY; Lee, WJ; Hwang, YS; Park, Chong-Ook; Kim, DW; Lee, YS; Whang, CN, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.16, no.4, pp.2019 - 2025, 1998-01 | |
| Co-sputter deposited Ta-Si diffusion barrier between Si and Cu: the effects of Si content on the barrier property Lee, YJ; Suh, BS; Park, Chong-Ook, THIN SOLID FILMS, v.357, no.2, pp.237 - 241, 1999-12 | |
| PHASE-TRANSFORMATION OF CRYSTALLINITY OF SI1-XGEX LAYERS GROWN ON SI(001) BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY LEE, SC; Lee, JeongYong; YUN, SJ, JOURNAL OF CRYSTAL GROWTH, v.150, no.1-4, pp.974 - 979, 1995-05 | |
| Structural investigation of nitrided c-sapphire substrate by grazing incidence x-ray diffraction and transmission electron microscopy Lee, HJ; Ha, JS; Lee, SW; Goto, H; Lee, SH; Cho, MW; Yao, T; Minegishi, T; Hanada, T; Hong, SK; Sakata, O; Lee, JW; Lee, JeongYong, APPLIED PHYSICS LETTERS, v.91, pp.892 - 899, 2007-11 | |
| Large-scale fabrication of single-phase Er2SiO5 nanocrystal aggregates using Si nanowires Suh, Ki-Seok; Shin, Jung-Hoon; Seo, Seok-Jun; Bae, Byeong-Soo, APPLIED PHYSICS LETTERS, v.89, pp.1751 - 1759, 2006-11 | |
| Finding interstitial oxygen in an Si substrate during low-temperature plasma oxidation Kim, BH; Ahn, JH; Ahn, Byung Tae, APPLIED PHYSICS LETTERS, v.82, pp.2682 - 2684, 2003-04 |
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