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Results 1-10 of 13 (Search time: 0.008 seconds).
| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Study on the growth of crack-free AlxGa1-xN (0.133 >= x > 0.1)/GaN heterostructure with low dislocation density Cho, HK; Lee, JeongYong; Choi, SC; Yang, GM, JOURNAL OF CRYSTAL GROWTH, v.222, no.1-2, pp.104 - 109, 2001-01 | |
| Structural properties of GaN grown by pendeo-epitaxy with in-doping Hong, YK; Kim, CS; Jung, HS; Hong, CH; Kim, MH; Leem, SJ; Cho, HK; Lee, JeongYong, PHYSICA STATUS SOLIDI B-BASIC RESEARCH, v.228, no.1, pp.235 - 238, 2001-11 | |
| Effect of buffer layers and stacking faults on the reduction of threading dislocation density in GaN overlayers grown by metalorganic chemical vapor deposition Cho, HK; Lee, JeongYong; Kim, KS; Yang, GM; Song, JH; Yu, PW, JOURNAL OF APPLIED PHYSICS, v.89, no.5, pp.2617 - 2621, 2001-03 | |
| Superlattice-like stacking fault and phase separation of InxGa1-xN grown on sapphire substrate by metalorganic chemical vapor deposition Cho, HK; Lee, JeongYong; Kim, KS; Yang, GM, APPLIED PHYSICS LETTERS, v.77, no.2, pp.247 - 249, 2000-07 | |
| Microstructural and electrical investigation of low resistance and thermally stable Pd/Ni contact on p-type GaN Jang, HW; Cho, HK; Lee, JeongYong; Lee, JL, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.150, pp.G212 - G215, 2003-03 | |
| Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density Cho, HK; Lee, JeongYong; Yang, GM; Kim, CS, APPLIED PHYSICS LETTERS, v.79, no.2, pp.215 - 217, 2001-07 | |
| Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells Cho, HK; Lee, JeongYong; Sharma, N; Humphreys, CJ; Yang, GM; Kim, CS; Song, JH; Yu, PW, APPLIED PHYSICS LETTERS, v.79, no.16, pp.2594 - 2596, 2001-10 | |
| Thermal annealing effects on the photoluminescence of InGaN/GaN quantum wells Lee, WH; Kim, KS; Yang, GM; Hong, CH; Lim, KY; Suh, EK; Lee, HJ; Cho, HK; Lee, JeongYong, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, no.1, pp.136 - 140, 2001-07 | |
| Strain relaxation behavior of the InGaN/GaN multiple quantum wells observed by transmission electron microscopy Cho, HK; Lee, JeongYong; Leem, JY, APPLIED SURFACE SCIENCE, v.221, pp.288 - 292, 2004-01 | |
| Structural and optical investigation of InGaN/GaN multiple quantum well structures with various indium compositions Cho, HK; Lee, JeongYong; Kim, CS; Yang, GM, JOURNAL OF ELECTRONIC MATERIALS, v.30, no.10, pp.1348 - 1352, 2001-10 |