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Results 1-10 of 118 (Search time: 0.006 seconds).
| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Surface morphology of InGaAs on GaAs(100) by chemical beam epitaxy using unprecracked monoethylarsine, triethylgallium and trimethylindium Park, SJ; Ro, JR; Ha, JS; Kim, SB; Park, HyoHoon; Lee, EH; Yi, JY; Lee, JeongYong, SURFACE SCIENCE, v.350, no.1-3, pp.221 - 228, 1996-04 | |
| Visible luminescences from thermally grown silicon dioxide thin films Choi, WC; Lee, MS; Kim, EK; Kim, CK; Min, SK; Park, CY; Lee, JeongYong, APPLIED PHYSICS LETTERS, v.69, no.22, pp.3402 - 3404, 1996-11 | |
| Structural properties and interfacial layer formation of Pd films grown on InP substrates Kim, TW; Yoon, YS; Lee, JeongYong; Shin, YD; Yoo, KH; Kim, CO, APPLIED SURFACE SCIENCE, v.136, no.1-2, pp.117 - 122, 1998-10 | |
| The role and mechanism of a ZnTe buffer layer on the structural properties of the strained CdxZn1-xTe/ZnTe double quantum wells Kim, TW; Lee, DU; Lim, YS; Lee, JeongYong; Park, HL, SOLID STATE COMMUNICATIONS, v.106, no.3, pp.153 - 156, 1998-04 | |
| CHANGE OF THE CRITICAL THICKNESS IN THE PREFERRED ORIENTATION OF TIN FILMS OH, UC; JE, JH; Lee, JeongYong, JOURNAL OF MATERIALS RESEARCH, v.10, no.3, pp.634 - 639, 1995-03 | |
| Fabrication of thin film transistors using a Si/Si1-xGex/Si triple layer film on a SiO2 substrate Kim, JH; Lee, JeongYong; Kim, HS; Song, YH; Nam, KS, IEEE ELECTRON DEVICE LETTERS, v.17, no.5, pp.205 - 207, 1996-05 | |
| Structural properties of Pt/p-InP heterostructures Kim, TW; Yoon, YS; Lee, JeongYong, APPLIED PHYSICS LETTERS, v.69, no.7, pp.972 - 974, 1996-08 | |
| Epitaxial growth of GaN on LaAlO3(100) substrate by RF plasma assisted molecular beam epitaxy Lee, JJ; Kang, KY; Park, YS; Yang, CS; Kim, HS; Kim, KH; Kang, TW; Park, SH; Lee, JeongYong, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.38, no.11, pp.6487 - 6488, 1999-11 | |
| THE EFFECT OF IN-SITU BORON DOPING ON THE STRAIN RELAXATION OF SI0.8GE0.2-B/SI HETEROSTRUCTURE GROWN BY MOLECULAR-BEAM EPITAXY LEE, SC; YUN, SJ; Lee, JeongYong, JOURNAL OF CRYSTAL GROWTH, v.150, no.1-4, pp.999 - 1004, 1995-05 | |
| High resolution transmission electron microscopy study on the microstructures of aluminum nitride and hydrogenated aluminum nitride films prepared by radio frequency reactive sputtering Yong, YJ; Lee, JeongYong; Kim, HS, APPLIED PHYSICS LETTERS, v.71, pp.1489 - 1491, 1997-12 |