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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Effects of stress on solid-phase epitaxial regrowth and corner defect generation in As+-implanted, two-dimensional amorphized Si Shin, YG; Lee, JeongYong; Park, MH; Kang, HK, JOURNAL OF CRYSTAL GROWTH, v.231, no.1-2, pp.107 - 114, 2001-09 | |
| Investigation of the structure of zirconia nanoparticles by high-resolution transmission electron microscopy Shevchenko, VY; Khasanov, OL; Madison, AE; Lee, JeongYong, GLASS PHYSICS AND CHEMISTRY, v.28, no.5, pp.322 - 325, 2002-09 | |
| High-resolution transmission electron microscopic observation of highly dense MgB2 superconductors Sung, GY; Kim, SH; Kim, J; Yoo, DC; Lee, JW; Lee, JeongYong; Jung, CU; Park, MS; Kang, WN; Du, ZL; Lee, SI, SUPERCONDUCTOR SCIENCE TECHNOLOGY, v.14, no.10, pp.880 - 883, 2001-10 | |
| Effect of the target power density on the synthesis and physical properties of sputtered nc-C films Myung, HS; Park, YS; Hong, B; Han, JG; Kim, YH; Lee, JeongYong; Shaginyan, LR, THIN SOLID FILMS, v.494, pp.123 - 127, 2006-01 | |
| Coexisting phenomena of the CuPt-type and the Cu3Au-type ordered structures near ZnTe/ZnSe heterointerfaces in ZnxCd1-xTe/ZnSySe1-y quantum wells Kim, TW; Lee, DU; Choo, DC; Lim, YS; Lee, HS; Lee, JeongYong; Lim, H, SOLID STATE COMMUNICATIONS, v.117, no.8, pp.501 - 504, 2001-02 | |
| Dependence of the InAs size distribution on the stacked layer number for vertically stacked InAs/GaAs quantum dots Lee, HS; Lee, JeongYong; Kim, TW; Choo, DC; Kim, MD; Seo, SY; Shin, JungHoon, JOURNAL OF CRYSTAL GROWTH, v.241, no.1-2, pp.63 - 68, 2002-05 | |
| Dependence of the optical properties on the temperatures in multiple-stacked InAs/GaAs quantum dots grown on GaAs (001) substrates Lee, HS; Lee, JeongYong; Kim, TW, JOURNAL OF CRYSTAL GROWTH, v.258, pp.256 - 260, 2003-11 | |
| Formation of Y2O3 interface layer in a YMnO3/Si ferroelectric gate structure Choi, JH; Lee, JeongYong; Kim, YT, APPLIED PHYSICS LETTERS, v.77, no.24, pp.4028 - 4030, 2000-12 | |
| Strain-induced diffusion in a strained Si1-xGex/Si heterostructure Lim, YS; Lee, JeongYong; Kim, HS; Moon, DW, APPLIED PHYSICS LETTERS, v.77, no.25, pp.4157 - 4159, 2000-12 | |
| Effects of growth interruption on high indium content InGaN/GaN multi quantum wells Cheong, MG; Choi, RJ; Kim, CS; Yoon, HS; Hong, CH; Suh, EK; Lee, HJ; Cho, HK; Lee, JeongYong, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.38, no.6, pp.701 - 705, 2001-06 |
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