GaAs/AlGaAs Lensed LED by the Meltback-Etch and Regrowth in Liquid Phase Epitaxy

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dc.contributor.authorS.H.Hahmko
dc.contributor.authorG.S.Choko
dc.contributor.authorKwon, Young Seko
dc.date.accessioned2013-02-25T06:33:04Z-
dc.date.available2013-02-25T06:33:04Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1991-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS, v.30, no.5, pp.910 - 913-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/10203/60449-
dc.languageEnglish-
dc.publisherJapan Soc Applied Physics-
dc.titleGaAs/AlGaAs Lensed LED by the Meltback-Etch and Regrowth in Liquid Phase Epitaxy-
dc.typeArticle-
dc.identifier.scopusid2-s2.0-24844443894-
dc.type.rimsART-
dc.citation.volume30-
dc.citation.issue5-
dc.citation.beginningpage910-
dc.citation.endingpage913-
dc.citation.publicationnameJAPANESE JOURNAL OF APPLIED PHYSICS-
dc.contributor.localauthorKwon, Young Se-
dc.contributor.nonIdAuthorS.H.Hahm-
dc.contributor.nonIdAuthorG.S.Cho-
dc.subject.keywordAuthorIntegration-
dc.subject.keywordAuthorLight emitting diode-
dc.subject.keywordAuthorLiquid phase epitaxy-
dc.subject.keywordAuthorMeltback etch-
dc.subject.keywordAuthorMicro-lens-
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