Controlling the wafer temperatures from 200 to 500-degrees-C at H-2/WF6 flow ratio equal to 24, low-resistive (about 11-mu-OMEGA-cm) tungsten thin films are deposited by plasma-enhanced chemical vapor deposition. The as-deposited tungsten films have (110), (200), and (211) oriented bcc structures and Auger depth profile shows that fluorine and oxygen impurities are below the detection limit of Auger electron spectroscopy.