INTERMODULATION DISTORTION IN A MULTIPLE-QUANTUM-WELL SEMICONDUCTOR OPTICAL AMPLIFIER
We report the measurement of intermodulation distortion (IMD) induced by carrier-density modulation in a multiple-quantum-well semiconductor amplifier. The results show that multiple-quantum-well amplifiers have 15 dB less IMD than conventional buried heterostructure semiconductor amplifiers. Also, the frequency response of the IMD shows a dependence arising from two distinct carrier lifetimes, 200-250 ps and < 10 ps.
- Issue Date
- 1991-02
- Language
- English
- Article Type
- Article
- Keywords
LASER
- Citation
IEEE PHOTONICS TECHNOLOGY LETTERS, v.3, no.2, pp.130 - 132
- ISSN
- 1041-1135
- Appears in Collection
- EE-Journal Papers(저널논문)
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