THE INFLUENCES OF TRAPS ON THE GENERATION-RECOMBINATION CURRENT IN SILICON DIODES
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Issue Date
- 1980
- Language
- English
- Article Type
- Article
- Citation
SOLID-STATE ELECTRONICS, v.23, no.6, pp.655 - 660
- ISSN
- 0038-1101
- Appears in Collection
- EE-Journal Papers(저널논문)
- Files in This Item
- There are no files associated with this item.
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