RF front-end receiver design for the MB-OFDM UWB

Abstract

This thesis describes a design of CMOS RF front-end receiver for the MB-OFDM UWB receiver, which can provide up 480 Mbps data-rate in short range. In the thesis, the fundamentals of the design of RF circuits are introduced, and design techniques of wideband amplifier are intensively presented. Also, we will introduce the mixer design based on conventional design technique. First, wide simultaneous noise and input matching technique is introduced. With 3~5 GHz wide band noise matching can lead to improve the noise performance compare to previous arts. The noise figure of proposed 3~5 GHz SNIM LNA shows sufficient input matching, enough gain and constant low noise performance. Decreased noise performance, due to the low quality factor of on-chip inductor, can be solved by recent technology including thick top metal on-chip inductor. Proposed SNIM LNA is implemented by TSMC 0.18$\mum$ and IBM 0.13$\mum$ foundry for comparing on-chip inductor effect. In 0.18$\mum$ case, the measurement NF, 3.5~4.5dB, is similar with simulation result. In 0.13$\mum$ case, simulation result with on-chip inductor shows 1.5~2.2dB noise performance which is strongly low enough. The power consumption is 4.5mA and 4mA from 1.8V and 1.5V supply, respectively. Second, an ultra-wide band low noise amplifier that adopts a common-gate topology as a first stage is presented. The common-gate/cascode two-stage amplifier is optimized for 3 to 10GHz full band UWB application. The design based on 0.18 $\mum$ CMOS technology shows 1 ~ 11 GHz input matching, 3 ~ 11.5GHz gain bandwidth with maximum gain of 14dB, and the noise figure of 3.7~ 2.7 dB over the frequency band of 3 ~ 11 GHz while dissipating 4.4mA from 1.8V supply. Third, direct conversion mixer for UWB receiver is introduced with simulation result only. This mixer is focused on the linearity improvement which is generated from device mismatch and then it is measured as an integration block with SNIM LNA. The conversion gain is 1...