Showing results 3021 to 3040 of 12376
Electronic structure calculations of O-vacancy in oxide semiconductors and insulators Chang, Kee-Joo, The 12th Asian workshop on First-principles Electronic Structure Calculations, 2009-10 |
Electronic structure of a magnetic quantum ring Kim, N; Ihm, G; Sim, Heung-Sun; Chang, Kee-Joo, PHYSICAL REVIEW B, v.60, no.12, pp.8767 - 8772, 1999-09 |
Electronic structure of aluminates in a new tubular form Chang, Kee-Joo, The 3rd Korea-China Workshop on Nanotubes and Nanowires, 2006-05 |
Electronic structure of collapsed C, BN, and BC3 nanotubes Kim, Yong-Hyun; Sim, Heung-Sun; Chang, Kee-Joo, CURRENT APPLIED PHYSICS, v.1, no.1, pp.39 - 44, 2001-09 |
Electronic Structure of Colloidal Semiconductor Nanocrystals 김용현, 한국물리학회 2021 가을 학술논문발표회 및 정기총회, 한국물리학회, 2021-10-22 |
Electronic structure of defects and hole gas in Ge/Si core-shell nanowires Park, J.-S.; Ryu, B.; Moon, C.-Y.; Chang, K. J., The 6th KIAS Electronic Structure Calculation Workshop, KIAS, 2010-06 |
Electronic structure of disorder-induced cation defects in amorphous oxide semiconductors Han, Woo Hyun; Chang, Kee Joo, 33rd International Conference on the Physics of Semiconductors, Peking University, 2016-08 |
Electronic structure of donor-pair defects in Si1-xGex alloy nanowires Park, J.-S.; Ryu, B.; Chang, Kee-Joo, The 6th KIAS Electronic Structure Calculation Workshop, KIAS, 2010-06 |
Electronic Structure of Donor-Pair Defects in Si1-xGex Alloy Nanowires Park, JS; Ryu, BK; Chang, Kee-Joo, 제11회 나노와이어 연구회 , 2010-08-20 |
Electronic structure of donor-pair defects in Si1-xGex alloy nanowires 박지상; 류병기; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2011-04 |
Electronic structure of flattened carbon nanotubes Kim, YH; Park, CJ; Chang, Kee-Joo, 2nd Korea-Japan Joint Workshop on Electronic Structure Calculations, pp.46 - 46, 1999 |
Electronic structure of flattened chiral carbon nanotubes Kim, YH; Park, CJ; Chang, Kee-Joo, 한국물리학회 학술발표회, pp.494 - 494, 한국물리학회, 1999 |
Electronic structure of graphene and doping effect on SiO2 Kang, YJ; Kang, J; Chang, Kee-Joo, PHYSICAL REVIEW B, v.78, no.11, pp.115404 - 115404, 2008-09 |
Electronic structure of In1-xGaxAs/GaAs strained quantum wells with a delta-doped layer Oh, JH; Chang, Kee-Joo; Ihm, G, JOURNAL OF PHYSICS-CONDENSED MATTER, v.8, no.11, pp.1705 - 1712, 1996-03 |
Electronic structure of intrinsic defects in non-stoichiometric amorphous In-Ga-Zn-O semiconductors Han, Woo Hyun; Chang, Kee Joo, APS March Meeting 2016, American Physics Society, 2016-03 |
Electronic structure of monolayer and bilayer MoS2 on SiO2 성하준; 최덕현; 장기주, The 10th KIAS Electronic Structure Calculation Workshop, KIAS, 2014-06 |
Electronic structure of non-stoichiometric amorphous In-Ga-Zn-O semiconductor Han, Woo Hyun; Chang, Kee Joo, The 18th Asian Workshop on First-Principles Electronic Structure Calculations, ISSP, 2015-11 |
Electronic structure of O-vacancy in amorphous zinc tin oxide Ryu, B.; Chang, Kee-Joo, 30th International Conference on the Physics of Semiconductors, 2010-07 |
Electronic structure of O-vacancy in high-k dielectrics and oxide semiconductors Chang, Kee-Joo; Noh, HK; Oh, YJ, MRS Spring, Moscone West and San Francisco Marriott, MRS, 2011-04 |
Electronic structure of oxygen interstitial defects in amorphous In-Ga-Zn-O semiconductor Han, Woo Hyun; Oh, Young Jun; Chang, Kee Joo, 2015 28th International Conference on Defects in Semiconductors, ICDS, 2015-07 |
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