Browse "Dept. of Physics(물리학과)" by Subject AB-INITIO

Showing results 1 to 15 of 15

1
Atomic structure of B-related defects and B diffusion in Si predoped with P impurities

Moon, CY; Kim, YS; Chang, Kee-Joo, PHYSICAL REVIEW B, v.69, no.8, pp.085208 - 085208, 2004-02

2
Chemical bonding and diffusion of B dopants in C-predoped Si

Jwa, Sanghun; Bang, Junhyeok; Chang, Kee-Joo, PHYSICAL REVIEW B, v.80, no.7, pp.075206 - 075206, 2009-08

3
Chemical bonding effect of Ge atoms on B diffusion in Si

Bang, J; Kang, J; Lee, WJ; Chang, Kee-Joo; Kim, H, PHYSICAL REVIEW B, v.76, pp.064118 - 064118, 2007-08

4
Effects of interface bonding and defects on boron diffusion at Si/SiO2 interface

Kim, Geun-Myeong; Oh, Young Jun; Chang, Kee-Joo, JOURNAL OF APPLIED PHYSICS, v.114, no.22, pp.223705 - 223705, 2013-12

5
Electronic structure and transport properties of hydrogenated graphene and graphene nanoribbons

Choe, D. H.; Bang, Junhyeok; Chang, Kee-Joo, NEW JOURNAL OF PHYSICS, v.12, pp.125005, 2010-12

6
First-principles study of the atomic structure of B-related defects in crystalline Si predoped with phosphorus

Moon, CY; Kim, YS; Chang, Kee-Joo, PHYSICA B-CONDENSED MATTER, v.340, pp.561 - 564, 2003-12

7
First-principles study of the segregation of boron dopants near the interface between crystalline Si and amorphous SiO2

Oh, Young-Jun; Noh, Hyeon-Kyun; Chang, Kee-Joo, PHYSICA B-CONDENSED MATTER, v.407, no.15, pp.2989 - 2992, 2012-08

8
Hole doping effect on ferromagnetism in Mn-doped ZnO nanowires

Tsogbadrakh, N; Choi, Eun-Ae; Lee, Woo-Jin; Chang, Kee-Joo, CURRENT APPLIED PHYSICS, v.11, pp.236 - 240, 2011-03

9
Large organic molecule chemisorption on the SiC(0001) surface

Boudrioua, O.; Yang, H.; Sonnet, Ph.; Stauffer, L.; Mayne, A. J.; Comtet, G.; Dujardin, G.; et al, PHYSICAL REVIEW B, v.85, no.3, 2012-01

10
Light-Induced Peroxide Formation in ZnO: Origin of Persistent Photoconductivity

Kang, Youngho; Nahm, Ho-Hyun; Han, Seungwu, SCIENTIFIC REPORTS, v.6, 2016-10

11
O(N) LDA+U electronic structure calculation method based on the nonorthogonal pseudoatomic orbital basis

Han, Myung-Joon; Ozaki, T; Yu, J, PHYSICAL REVIEW B, v.73, pp.102 - 107, 2006-01

12
Retardation of boron diffusion in SiGe alloy

Bang, Junhyeok; Kim, Hanchul; Kang, Joongoo; Lee, Woo-Jin; Chang, Kee-Joo, PHYSICA B-CONDENSED MATTER, v.401, pp.196 - 199, 2007-12

13
Stability and Segregation of B and P Dopants in Si/SiO2 Core-Shell Nanowires

Kim, Sung-Hyun; Park, Ji-Sang; Chang, Kee-Joo, NANO LETTERS, v.12, no.10, pp.5068 - 5073, 2012-10

14
Superconducting Open-Framework Allotrope of Silicon at Ambient Pressure

Sung, Ha-Jun; Han, Woo Hyun; Lee, In-Ho; Chang, Kee Joo, PHYSICAL REVIEW LETTERS, v.120, no.15, pp.157001, 2018-04

15
Suppression of boron segregation by interface Ge atoms at SiGe/SiO2 interface

Lee, Chang Hwi; Kim, Geun Myeong; Oh, Young Jun; Chang, Kee-Joo, CURRENT APPLIED PHYSICS, v.14, no.11, pp.1557 - 1563, 2014-11

rss_1.0 rss_2.0 atom_1.0