마스크 없는 Pendeo epitaxy 공정에 의한 저결함 GaN 박막의 미세구조 연구 = Microstructural characterization of the low dislocation density GaN films grown by maskless pendeo epitaxy

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dc.contributor.advisor이정용-
dc.contributor.advisorLee, Jeong-Yong-
dc.contributor.author박동준-
dc.contributor.authorPark, Dong-Jun-
dc.date.accessioned2011-12-15T01:46:21Z-
dc.date.available2011-12-15T01:46:21Z-
dc.date.issued2004-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=238318&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/51604-
dc.description학위논문(석사) - 한국과학기술원 : 신소재공학과, 2004.2, [ iv, 100 p. ]-
dc.languagekor-
dc.publisher한국과학기술원-
dc.subjectGAN-
dc.subjectGaN-
dc.subjectEPITAXY-
dc.subject박막-
dc.title마스크 없는 Pendeo epitaxy 공정에 의한 저결함 GaN 박막의 미세구조 연구 = Microstructural characterization of the low dislocation density GaN films grown by maskless pendeo epitaxy-
dc.typeThesis(Master)-
dc.identifier.CNRN238318/325007 -
dc.description.department한국과학기술원 : 신소재공학과, -
dc.identifier.uid020023220-
dc.contributor.localauthor박동준-
dc.contributor.localauthorPark, Dong-Jun-
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MS-Theses_Master(석사논문)
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