(A) study on oxidation of silicon by inductively coupled oxygen plasma and its application to polycrystalline silicon thin film transistors = 유도결합 산소플라즈마를 이용한 실리콘의 산화와 다결정실리콘박막트랜지스터에의 응용에 관한 연구

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 296
  • Download : 0
In polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) for active-matrix liquid crystal display (AMLCD), it is crucial to obtain high-quality $SiO_2$ film and Si/$SiO_2$ interface at low temperature for gate dielectric as the quality of channel poly-Si films improves. The interface quality of the oxide formed by oxidation method is better than that of the oxide by deposition method. Plasma oxidation has been extensively investigated as a means of low-temperature oxidation of silicon. But plasma oxides suffer from the poor-oxide quality due to the oxide damage by the bombardment of energetic ions and metallic contamination. Inductively coupled plasma (ICP) isa high density plasma, of which ion density is high because the sheath voltage of the plasma is small; the energy loss per ion lost is small. This small sheath voltage results in reduced oxide-damage and metallic contamination. The ICP source with planar configuration has a simple structure and low-aspectratio (height/diameter) so that it is suitable to low-temperature plasma oxidation process for poly-Si TFT, which requires a large-size glass substrate. We investigated the characteristics of the ICP with oxygen gas and the structural properties of $SiO_2$ films grown in the ICP with oxygen gas, and explained the kinetics of oxide growth in the ICP with oxygen gas. Furthermore, we applied ICP oxide to the poly-Si TFTs and analyzed the effect of the ICP oxidation on the properties of poly-Si films and TFTs. Silicon wafers were oxidized in the ICP oxidation system with oxygen gas at rf powers from 1.0 kW to 3.0 kW, temperatures from 350℃ to 450℃, and oxygen pressures from 5 mtorr to 200 mtorr. Maximum $5×10 ^{11}cm}^{-3}$ of ion density ($n_i$) was obtained in the ICP with oxygen gas at 10 mtorr and 3.0 kW, which is the maximum power of our system. This value is much higher than that of the conventional rf plasma. The electron temperature ($T_e$) and plasma potential ($V_p$) increased as the oxygen...
Advisors
Ahn, Byung-Taeresearcher안병태researcher
Description
한국과학기술원 : 재료공학과,
Publisher
한국과학기술원
Issue Date
1999
Identifier
155997/325007 / 000955813
Language
eng
Description

학위논문(박사) - 한국과학기술원 : 재료공학과, 1999.8, [ xix, 177 p. ]

Keywords

Kinetics; Structural properties; Plasma oxide; ICP; Poly-Si TFT; 다결정실리콘 박막트랜즈스터; 운동학; 구조적 특성; 플라즈마산화막; 유도결합플라즈마

URI
http://hdl.handle.net/10203/50365
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=155997&flag=dissertation
Appears in Collection
MS-Theses_Ph.D.(박사논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0