(The) effects of varying Si and $SiO_2$ layer thickness on $Er^{3+}$ luminescence in Er doped $Si/SiO_2$ superlattices

Abstract

Er-doped Si/$SiO_2$ superlattices thin films are deposited by electron cyclotron resonance-plasma enhanced chemical vapor deposition method with co-sputtering of Er-target. $Er^{3+}$ ions in such superlattices can be excited by carriers showing efficient excitation of $Er^{3+}$ ions. As Si layer thickness decreases $Er^{3+}$ luminescence increases due to band gap widening by confinement effect of Si nanoslabs. Due to increase of Er separated from Si layer, $Er^{3+}$ luminescence intensity increases as $SiO_2$ layers thickness increases. Finally, we fabricate diode structure using such films for application. The implication of results will be also discussed.