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Results 1-10 of 12 (Search time: 0.007 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1
Quantum Mechanical Simulation of Hole Transport in p-Type Si Schottky Barrier MOSFETs

Choi, Wonchul; Shin, Mincheolresearcher, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, pp.5861 - 5864, 2011-07

2
Full-quantum simulation of hole transport and band-to-band tunneling in nanowires using the k center dot p method

Shin, Mincheolresearcher, JOURNAL OF APPLIED PHYSICS, v.106, no.5, 2009-09

3
Intrinsic reduction of ballistic hole current due to quantum mechanical coupling of heavy and light holes in p-type Si nanowire field effect transistors

Shin, Mincheolresearcher, APPLIED PHYSICS LETTERS, v.99, no.14, 2011-10

4
Effect of channel orientation in p-type nanowire Schottky barrier metal-oxide-semiconductor field-effect transistors

Shin, Mincheolresearcher, APPLIED PHYSICS LETTERS, v.97, no.9, pp.092108, 2010-08

5
Quantum simulation of device characteristics of silicon nanowire FETs

Shin, Mincheolresearcher, IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.6, no.2, pp.230 - 237, 2007-03

6
Simulation Study of the Scaling Behavior of Top-Gated Carbon Nanotube Field Effect Transistors

Shin, Mincheolresearcher; Lee, Jaehyun; Ahn, Chiyui, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.8, no.10, pp.5389 - 5392, 2008-10

7
Non-equilibrium Greens function approach to three-dimensional carbon nanotube field effect transistor Simulations

Shin, Mincheolresearcher, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.52, no.4, pp.1287 - 1291, 2008-04

8
Quantum simulation of coaxially gated CNTFETs by using an effective mass approach

Ahn, C; Shin, Mincheolresearcher, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.6, pp.1887 - 1893, 2007-06

9
p-Type Nanowire Schottky Barrier MOSFETs: Comparative Study of Ge- and Si-Channel Devices

Choi, Won Chul; Lee, Jaehyun; Shin, Mincheolresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.1, pp.37 - 43, 2014-01

10
Surface roughness scattering effects on the ballisticity of Schottky barrier nanowire field effect transistors

Jung, Hyo Eun; Shin, Mincheolresearcher, JOURNAL OF APPLIED PHYSICS, v.118, no.19, pp.195703-1 - 195703-7, 2015-11

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