Browse "EE-Journal Papers(저널논문)" by Subject 1/f noise

Showing results 1 to 14 of 14

1
1/f noise characteristics of hydrogenated long-wavelength infrared HgCdTe photodiode

Yang, KD; Lee, YS; Lee, Hee Chul, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, v.43, pp.L1617 - L1619, 2004-12

2
8-GHz CMOS quadrature VCO using transformer-based LC tank

Baek, D; Song, T; Yoon, E; Hong, Songcheol, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.13, no.10, pp.446 - 448, 2003-10

3
A low-power CMOS direct conversion receiver with 3-dB NF and 30-kHz flicker-noise corner for 915-MHz band IEEE 802.15.4 ZigBee standard

Nguyen, Trung-Kien; Oh, Nam-Jin; Le, Viet-Hoang; Lee, Sang-Gug, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.54, no.2, pp.735 - 741, 2006-02

4
A low-power RF direct-conversion receiver/transmitter for 2.4-GHZ band IEEE 802.15.4 standard in 0.18-mu m CMOS technology

Nguyen, TK; Krizhanovskii, V; Lee, J; Han, SK; Lee, Sang-Gug; Kim, NS; Pyo, CS, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.54, pp.4062 - 4071, 2006-12

5
An LC-VCO strongly suppresses the AM-FM conversion caused by varactor

Shin, SB; Lee, Sang-Gug, IEICE TRANSACTIONS ON ELECTRONICS, v.E91C, pp.1516 - 1519, 2008-09

6
Analysis of 1/f noise in LWIR HgCdTe photodiodes

Bae, SH; Lee, SJ; Kim, YH; Lee, Hee Chul; Kim, Choong Ki, JOURNAL OF ELECTRONIC MATERIALS, v.29, no.6, pp.877 - 882, 2000-06

7
Border-trap characterization in high-kappa strained-si MOSFETs

Maji, Debabrata; Duttagupta, S. P.; Rao, V. Rarngopal; Yeo, Chia Ching; Cho, Byung Jin, IEEE ELECTRON DEVICE LETTERS, v.28, no.8, pp.731 - 733, 2007-08

8
Enhanced bolometric properties of nickel oxide thin films for infrared image sensor applications by substitutional incorporation of Li

Kang, In-Ku; Reddy, Y. Ashok Kumar; Shin, Young Bong; Kim, Woo Young; Lee, Hee Chul, CERAMICS INTERNATIONAL, v.44, no.7, pp.7808 - 7813, 2018-05

9
Feasibility Study of Extended-Gate-Type Silicon Nanowire Field-Effect Transistors for Neural Recording

Kang, Hongki; Kim, Jee-Yeon; Choi, Yang-Kyu; Nam, Yoonkey, SENSORS, v.17, no.4, 2017-04

10
High-performance RF mixer and operational amplifier BiCMOS circuits using parasitic vertical bipolar transistor in CMOS technology

Nam, I; Lee, Kwyro, IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.40, pp.392 - 402, 2005-02

11
Low-power direct conversion transceiver for 915 MHz band IEEE 802.15.4b standard based on 0. 18 mu m CMOS technology

Nguyen, TK; Le, VH; Duong, QH; Han, SK; Lee, Sang-Gug; Seong, NS; Kim, NS; et al, ETRI JOURNAL, v.30, pp.33 - 46, 2008-02

12
RF CMOS LC-oscillator with source damping resistors

Yun, SJ; Cha, CY; Choi, HC; Lee, Sang-Gug, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.16, pp.511 - 513, 2006-09

13
Significance of gate oxide thinning below 1.5 nm on 1/f noise behavior in n-channel metal-oxide-semiconductor field-effect transistors under electrical stress

Mheen, B; Kim, M; Song, YJ; Hong, Songcheol, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.45, no.6A, pp.4943 - 4947, 2006-06

14
Sputtering pressure dependent bolometric properties of Ni1-xO thin films for uncooled bolometer applications

Kang, In-Ku; Reddy, Y. Ashok Kumar; Shin, Young Bong; Kim, Woo Young; Lee, Hee Chul, CERAMICS INTERNATIONAL, v.43, no.12, pp.9498 - 9504, 2017-08

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