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Browse "EE-Conference Papers(학술회의논문)" by Author Hu, H

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Showing results 1 to 9 of 9

1	A comparison study of high-density MIM capacitors with ALD HfO2-Al2O3 laminated, sandwiched and stacked dielectrics Cho, Byung Jin; Ding, SJ; Hu, H; Zhu, C; Kim, SJ; Li, MF; Chin, A; et al, Conference on Solid State and Integrated Circuit Technology (ICSICT), pp.0 - 0, 2004-10-18
2	High-performance ALD HfO2-Al2O3 laminate MIM capacitors for RF and mixed signal IC applications Cho, Byung Jin; Hu, H; Ding, SJ; Lim, HF; Zhu, C; Li, MF; Kim, SJ, International Electron Device Meeting (IEDM), pp.0 - 0, 2003-12-08
3	Material and electrical characterization of HfO2 films for MIM capacitors applications Cho, Byung Jin; Hu, H; Zhu, C; Lu, YF; Zeng, JN; Wu, YH; Liew, YF, MRS Spring meeting, pp.0 - 0, 2003-04-22
4	MIM capacitors with HfO2 and HfAlOx for Si RF and analog applications Cho, Byung Jin; Yu, X; Zhu, C; Hu, H; Chin, A; Li, MF; Kwong, DL, MRS Spring meeting, pp.0 - 0, 2003-04-21
5	Photoluminescene from silicon nanocrystals formed by pulsed laser deposition Cho, Byung Jin; Chen, XY; Lu, YF; Wu, YH; Song, WD; Hu, H, MRS Symposium, pp.13 - 13, 2003-04-22
6	Properties of PVD Hafnium oxide films in metal-insulator-metal structure and the role of HfN barrier at dielectric/metal interface Cho, Byung Jin; Kim, SJ; Lim, HF; Hu, H; Yu, XF; Yu, HY; Li, MF, 2nd International Conference on Materials for Advanced Technologies, pp.513 - 513, 2003-12-11
7	Silicon nanostructured films formed by pulsed-laser deposition in inert gas and reactive gas Cho, Byung Jin; Chen, XY; Lu, YF; Wu, YH; Hu, H, MRS Symposium, pp.19 - 19, 2003-04-21
8	Study of PVD HfO2 and HfOxNy as dielectrics for MIM capacitor application Cho, Byung Jin; Lim, HF; Kim, SJ; Hu, H; Yu, XF; Yu, HY; Li, MF, International Conference on Materials for Advanced Technologies, pp.532 - 532, 2003-12-11
9	Voltage and temperature dependence of capacitance of high-K hfO2 MIM capacitors: A unified understanding and prediction Cho, Byung Jin; Zhu, C; Hu, H; Yang, XF; Kim, SJ; Chin, A, International Electron Device Meeting (IEDM), pp.0 - 0, IEEE International Electron Devices, 2003-12-08

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