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Browse "EE-Conference Papers(학술회의논문)" by Author Haddad, G. I.

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Showing results 1 to 17 of 17

1
16 GHz bandwidth InAlAs/InGaAs monolithically integrated PIN-HBT photoreceiver

A. L. Gutierrez-Aitken; Yang, Kyounghoon; Zhang, X.; Haddad, G. I.; Bhattacharya, P., Europ. Conf. on Optical Comm, pp.661 - 664, 1995

2
16-channel monolithically integrated InP-based p-i-n/HBT photoreceiver array with 11-GHz channel bandwidth and low crosstalk

Syao, K. C.; Yang, Kyounghoon; A. L. Gutierrez-Aitken; Zhang, X.; Haddad, G. I.; Bhattacharya, P., 1997 Optical Fiber Comm. Conf. (OFC'97), pp.15 - 16, 1997-02-16

3
9 GHz Bandwidth InP-Based Integrated PIN-HBT Photoreceiver

Gutierrez-Aitken, A. L.; Yang, Kyounghoon; Zhang, X.; Haddad, G. I.; Bhattacharya, P., IEEE Int. Conf. on InP and Related materials, pp.357 - 360, IEEE, 1995-05

4
A monolithic ultrahigh-speed InAlAs/InGaAs PIN-HBT photoreceiver with a bandwidth of 18.6 GHz

Yang, Kyounghoon; A. L. Gutierrez-Aitken; Zhang, X.; Bhattacharya, P.; Haddad, G. I., International Symposium on Compound Semiconductors, pp.1097 - 1102, 1995

5
A novel technique to reduce crosstalk in monolithically integrated high speed photoreceiver arrays

Syao, K. C.; A. L. Gutierrez-Aitken; Yang, Kyounghoon; Zhang, X.; Haddad, G. I.; Bhattacharya, P., IEEE Int. Electron Devices Meeting (IEDM'96), pp.649 - 652, IEEE, 1996-12-08

6
A Ring oscillator using an RTD-HBT heterostructure

Lin, C. H.; Yang, Kyounghoon; East, J. R.; Haddad, G. I.; Chow, D.H.; Warren, L. D.; Dunlap, H. L.; et al, Int. Conf. On Superlattices, Microstructures, and Microdevices 2000 (ICSMM-2000), pp.120 - 121, 2000

7
Automatic control of efficiency and linearity in power amplifiers for low-power wireless communications

Yang, Kyounghoon; East, J. R.; Haddad, G. I., Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp.113 - 118, 1998-09

8
Class A dc bias controlled amplifiers for OFDM systems

Jong, J. H.; Yang, Kyounghoon; Stark, W. E.; Haddad, G. I., 1999 IEEE Topical Workshop on Power Amps. for Wireless Comm, IEEE, 1999-09-13

9
Double Heterojunction Bipolar Transistors with Chirped InGaAs/InP Superlattice Base-Collector Junction Grown by CBE

Yang, Kyounghoon; Muuns, G. O.; Wang, X.; Haddad, G. I., IEEE Int. Conf. on InP and Related Materials, pp.645 - 648, IEEE, 1997-05-11

10
Fabrication and characterization of RTD-HBT inverter

Lin, C. H.; Yang, Kyounghoon; Gonzalez, A. F.; East, J. R.; Mazumder, P.; Haddad, G. I.; Chow, D.H.; et al, 17th IEEE Cornell Conference, pp.42 - 43, IEEE, 2000-08-07

11
InP-Based High Speed Digital Logic Gates Using an RTD/HBT Heterostructure

Lin, C. H.; Yang, Kyounghoon; Gonzalez, A. F.; East, J. R.; Mazumder, P.; Haddad, G. I., IEEE Int. Conf. on InP and Related Material, pp.419 - 422, IEEE, 1999-05-16

12
Large bandwidth InP-based monolithically integrated PIN-HBT photoreceivers for optical communications

A. L. Gutierrez-Aitken; Bhattacharya, P.; Cowles, J.; Yang, Kyounghoon; Haddad, G. I., Conference on Manufacturing Process Development in Photonics, pp.197 - 203, 1994-11-01

13
Monolithically Integrated InP-Based Minority Logic Gate Using an RTD/HBT Heterostructure

Lin, C. H.; Yang, Kyounghoon; Bhattachrya, M.; Wang, X.; Zhang, X.; East, J. R.; Mazumder, P.; et al, IEEE Int. Conf. on InP and Related Materials, pp.419 - 422, IEEE, 1998-05-11

14
Numerical study of the DC characteristics of InGaAs abrupt emitter HBT's using a self-consistent boundary condition approach

Yang, Kyounghoon; East, J. R.; Haddad, G. I., Int. Semicond. Device Research Symp., pp.551 - 554, 1993-11-01

15
Performance of OFDM systems with adaptive nonlinear amplifiers

Jong, J. H.; Yang, Kyounghoon; Stark,W. E.; Haddad, G. I., 1999 IEEE Military Communications Conference, pp.1110 - 1114, IEEE, 1999-10-31

16
SPICE-Based DC and Microwave Characterization of InAlAs/InGaAs HBT’s Used for Large-Bandwidth Integrated Transimpedance Amplifiers

Yang, Kyounghoon; Gutierrez-Aitken, A. L.; Zhang, X.; Haddad, G. I.; Bhattacharya, P., IEEE Int. Conf. on InP and Related materials, pp.448 - 451, IEEE, 1995-05

17
The validity of reciprocity and the Ebers-Moll model in abrupt heterojunction bipolar transistors

J. C. Cowles,; Yang, Kyounghoon; A. Guiterrez-Aitken; Munns, G. O.; Chen, W. L.; Haddad, G. I.; Bhattacharya, P. K., Int. Semicond. Device Research Symp., pp.787 - 790, 1993

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