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Very low defects and high performance Ge-On-Insulator p-MOSFETs with Al2O3 gate dielectrics Cho, Byung Jin; Huang, CH; Yang, MY; Chin, A; Chen, WJ; Zhu, CX; Li, MF, Symposium on VLSI Technology, pp.119 - 119, 2003-06-11 |
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