Reconfigurable multi-band class E Power amplifier for mobile and wireless applications무선 통신용 다중대역 E급 전력증폭기 설계

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The implementation of multi-band systems is a very important issue for the next generation wireless communication. The number of mobile and wireless users has been increasing year by year and the many kinds of digital wireless handsets such as GSM, EDGE, CDMA, WCDMA, WLAN and WiMAX have been used in many applications. All of these handsets commonly require a low-cost low-operation-voltage small-chip-size power amplifier. In response to the increased demand for wireless services and the need for greater capacity, wireless networks have been expanded to provide services over higher frequencies. To address these demands, operators and handset manufacturers are introducing multi-mode, multi-band handsets that enable automatic roaming across different operating systems and operating frequencies. While the base-band and analogue circuits can be integrated for the multi-mode and multi-band functions without significant problems using ULSI technologies, the integration of RF circuits, especially the power amplifier (PA), needs serious circuit researches because of the difficulties in optimum power matching and harmonic elimination for each band. The general techniques for multi-band PA are use of parallel PA’s structure or parallel matching circuit for each band, and use of switchable circuit for tunability. In this thesis, we propose a reconfigurable multi-band power amplifier with single input/output port and single-chain structure. Firstly, we propose two different Class AB single power amplifier structures and demonstrate for multi-band mobile terminals applications. An MMIC single power amplifier with dual input (SPDI) has been devised for cellular/PCS/W-CDMA triple band applications, and an MMIC single power amplifier with single input (SPSI) has been devised for cellular/PCS dual-band application. These multi-band single power amplifiers can achieve a small chip and module size and operate with single operation voltage. Moreover, the SPSI structure can be applie...
Advisors
Park, Chul-Soonresearcher박철순researcher
Description
한국과학기술원 : 정보통신공학과,
Publisher
한국과학기술원
Issue Date
2011
Identifier
466493/325007  / 020045315
Language
eng
Description

학위논문(박사) - 한국과학기술원 : 정보통신공학과, 2011.2, [ xiii, 108 p. ]

Keywords

multi-band; radio frequency; power amplifier; CMOS; CMOS; 다중대역; 고주파; 전력증폭기

URI
http://hdl.handle.net/10203/39883
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=466493&flag=dissertation
Appears in Collection
ICE-Theses_Ph.D.(박사논문)
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