3μm gate length 를 갖는 GaAs MESFET 제작Fabrication of GaAs MESFET with a 3μm gate length

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dc.contributor.advisor권영세-
dc.contributor.advisorKwon, Young-Se-
dc.contributor.author이윤종-
dc.contributor.authorLee, Yoon-Jong-
dc.date.accessioned2011-12-14T02:24:12Z-
dc.date.available2011-12-14T02:24:12Z-
dc.date.issued1986-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=65222&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/39804-
dc.description학위논문(석사) - 한국과학기술원 : 전기 및 전자공학과, 1986.2, [ [ii], 43 p. ]-
dc.languagekor-
dc.publisher한국과학기술원-
dc.title3μm gate length 를 갖는 GaAs MESFET 제작-
dc.title.alternativeFabrication of GaAs MESFET with a 3μm gate length-
dc.typeThesis(Master)-
dc.identifier.CNRN65222/325007-
dc.description.department한국과학기술원 : 전기 및 전자공학과, -
dc.identifier.uid000841234-
dc.contributor.localauthor권영세-
dc.contributor.localauthorKwon, Young-Se-
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