DC characteristics of buried channel MOSFET's

Abstract

DC characteristics of a buried channel MOSFET``s is obtained from two-dimensional numerical analyses of the devices and compared with the experimental measurements. Good agreement between the theory and experiment has been found for the normal operating region as well as the subthreshold region for the devices with long channel lengths ($\ell\simeq5\mu{m}$). The numerical analysis has also been applied to a short channel device ($\ell=1\mu{m}$) which has the buried channel MOSFET structure to show the feasibility of "Triode-like" drain characteristics. Experimental results on the devices with "Triode-like" drain characteristics are also presented.