DC characteristics of buried channel MOSFET's = Buried channel MOSFET 의 직류 특성에 관한 연구

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DC characteristics of a buried channel MOSFET``s is obtained from two-dimensional numerical analyses of the devices and compared with the experimental measurements. Good agreement between the theory and experiment has been found for the normal operating region as well as the subthreshold region for the devices with long channel lengths ($\ell\simeq5\mu{m}$). The numerical analysis has also been applied to a short channel device ($\ell=1\mu{m}$) which has the buried channel MOSFET structure to show the feasibility of "Triode-like" drain characteristics. Experimental results on the devices with "Triode-like" drain characteristics are also presented.
Advisors
Kim, Choong-Ki김충기
Description
한국과학기술원 : 전기 및 전자공학과,
Publisher
한국과학기술원
Issue Date
1980
Identifier
62695/325007 / 000781085
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 전기 및 전자공학과, 1980.2, [ iv, 78, [18] p. ]

URI
http://hdl.handle.net/10203/39509
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=62695&flag=dissertation
Appears in Collection
EE-Theses_Master(석사논문)
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