Fabrication of the integrated injection logic by new process = 새로운 제작 방법에 의한 Integrated injection logic 의 제작

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A modified $I^2L$ structure having self-aligned collectors and heavy doping in the extrinsic base region has been fabricated by a new process requiring only five masks. The new fabrication process, which uses the spin-on sources as the diffusion sources, utilizes the hardened spin-on source as a diffusion mask. The sheet resistance in the intrinsic base region can be controlled independently by this new process. $I^2L$ test devices including 13-stage ring oscillator have been fabricated with silicon wafers of 6.5㎛ epi-layer by the new process. An upward npn current gain of 8 for a three-collector $I^2L$, a speed power product of 3.5 pJ and a minimum propagation delay time of 50 ns with standard device breakdown (BV$_{CEO}$) of 22 volts have been obtained. And the test results show that the current gain control of the npn transistor can be easily achieved by varying the sheet resistance in the intrinsic base region during boron predeposition step.
Advisors
Kim, Choong-Ki김충기
Description
한국과학기술원 : 전기 및 전자공학과,
Publisher
한국과학기술원
Issue Date
1979
Identifier
62484/325007 / 000771167
Language
eng
Description

학위논문 (석사) - 한국과학기술원 : 전기 및 전자공학과, 1979.8, [ [v], 58 p. ]

URI
http://hdl.handle.net/10203/39505
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=62484&flag=dissertation
Appears in Collection
EE-Theses_Master(석사논문)
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