Application of ZnO nanocrystals as a nonvolatile memory = ZnO 나노결정을 이용한 비휘발성 메모리 소자의 제작과 특성 평가

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Next generation memory requires more aggressive scaling down of tunneling oxide to improve performance. Thin tunneling oxide allows low power operation, high speed, and high density. However, FLASH memory will be faced with shrink limitation of tunneling oxide soon. Nanocrystal memory has been emerging as a strong candidate for next generation memory. However, retention degradation is remained unsolved problem especially in case of 3~4 nm tunneling oxide. In this work, we will introduce new material, new fabrication process to improve retention characteristic. ZnO in nanostructure is reported to have high work function. We deposited high density ZnO nanocrystals by two-step CVD process which can minimize damage to tunneling oxide. Fabricated MOS device show high performance with 10years retention. Finally, by stacking double layer ZnO nanocrystals, we achieve more improvement.
Advisors
Lim, Keong-Suresearcher임굉수researcher
Description
한국과학기술원 : 전기및전자공학전공,
Publisher
한국과학기술원
Issue Date
2007
Identifier
264991/325007  / 020053391
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 전기및전자공학전공, 2007.2, [ 39 p. ]

Keywords

nanocrystal; ZnO; nonvolatile memory; 메모리; 비휘발성; 나노결정; ZnO

URI
http://hdl.handle.net/10203/38480
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=264991&flag=dissertation
Appears in Collection
EE-Theses_Master(석사논문)
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