실리콘 나노결정 메모리의 전자 충방전 현상 이론 해석 = Theoretical analysis of electron charging and discharging phenomena in silicon nanocrystal memory

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dc.contributor.advisor임굉수-
dc.contributor.advisorLim, Koeng-Su-
dc.contributor.author이병석-
dc.contributor.authorLee, Byung-Suk-
dc.date.accessioned2011-12-14T01:48:57Z-
dc.date.available2011-12-14T01:48:57Z-
dc.date.issued2001-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=169446&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/37490-
dc.description학위논문(석사) - 한국과학기술원 : 전기및전자공학전공, 2001.8, [ 56 p. ]-
dc.languagekor-
dc.publisher한국과학기술원-
dc.subject메모리-
dc.subject나노결정-
dc.subject시뮬레이션-
dc.subjectsimulation-
dc.subjectmemory-
dc.subjectnanocrystal-
dc.title실리콘 나노결정 메모리의 전자 충방전 현상 이론 해석 = Theoretical analysis of electron charging and discharging phenomena in silicon nanocrystal memory-
dc.typeThesis(Master)-
dc.identifier.CNRN169446/325007-
dc.description.department한국과학기술원 : 전기및전자공학전공, -
dc.identifier.uid020003376-
dc.contributor.localauthor임굉수-
dc.contributor.localauthorLim, Koeng-Su-
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EE-Theses_Master(석사논문)
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