실리콘 나노결정 메모리의 전자 충방전 현상 이론 해석Theoretical analysis of electron charging and discharging phenomena in silicon nanocrystal memory
- Advisors
- 임굉수researcher; Lim, Koeng-Suresearcher
- Description
- 한국과학기술원 : 전기및전자공학전공,
- Publisher
- 한국과학기술원
- Issue Date
- 2001
- Identifier
- 169446/325007 / 020003376
- Language
- kor
- Description
학위논문(석사) - 한국과학기술원 : 전기및전자공학전공, 2001.8, [ 56 p. ]
- Keywords
메모리; 나노결정; 시뮬레이션; simulation; memory; nanocrystal
- Appears in Collection
- EE-Theses_Master(석사논문)
- Files in This Item
- There are no files associated with this item.
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