실리콘 나노결정 메모리의 전자 충방전 현상 이론 해석 = Theoretical analysis of electron charging and discharging phenomena in silicon nanocrystal memory

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 618
  • Download : 0
Advisors
임굉수researcherLim, Koeng-Suresearcher
Description
한국과학기술원 : 전기및전자공학전공,
Publisher
한국과학기술원
Issue Date
2001
Identifier
169446/325007 / 020003376
Language
kor
Description

학위논문(석사) - 한국과학기술원 : 전기및전자공학전공, 2001.8, [ 56 p. ]

Keywords

메모리; 나노결정; 시뮬레이션; simulation; memory; nanocrystal

URI
http://hdl.handle.net/10203/37490
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=169446&flag=dissertation
Appears in Collection
EE-Theses_Master(석사논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0