Quantum dot flash memory using E-Beam lithography and RIE etching

Abstract

The quantum dot flash memory using E-beam lithography and RIE etching was fabricated and measured. The essential technology for fabricating the quantum dot flash memory which can act as a memory just with single electron by the quantum effect is the nano-size patterning. For this, many improvements such as PR thinning, wafer focusing, and chip size reducing to 200㎛ are suggested. With this, it succeeds in patterning 90nm wide pattern with 300nm thickness. With this improved patterning technology and $Cl_2$ based RIE etching, self-aligned 100nm wide quantum dot and 100nm wide narrow channel which is the most important structure for the quantum dot flash memory were fabricated. With this, the real device was fabricated. Although the single-electron effect didn``t observed at room temperature, the memory operating is observed. The number of electrons which was used for this operation is estimated about 35.