Analysis of high frequency noise in GaAs MESFET using monte carlo simulation = 몬테카를로 시뮬레이션을 이용한 갈륨 비소 전계 효과 트랜지스터의 고주파 잡음 해석

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All of the noise parameters of a GaAs Metal-Semiconductor Field-Effect Transistor (MESFET) are extracted using 2-dimensional Monte-Carlo simulation for the first time. The general procedure for extracting the noise parameters is presented. The spectrums and
Advisors
Hong, Song-Cheolresearcher홍성철researcher
Description
한국과학기술원 : 전기및전자공학과,
Publisher
한국과학기술원
Issue Date
1998
Identifier
135249/325007 / 000935176
Language
eng
Description

학위논문(박사) - 한국과학기술원 : 전기및전자공학과, 1998.2, [ [xi], 110 p. ]

URI
http://hdl.handle.net/10203/36447
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=135249&flag=dissertation
Appears in Collection
EE-Theses_Ph.D.(박사논문)
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