Analysis of high frequency noise in GaAs MESFET using monte carlo simulation몬테카를로 시뮬레이션을 이용한 갈륨 비소 전계 효과 트랜지스터의 고주파 잡음 해석
All of the noise parameters of a GaAs Metal-Semiconductor Field-Effect Transistor (MESFET) are extracted using 2-dimensional Monte-Carlo simulation for the first time. The general procedure for extracting the noise parameters is presented. The spectrums and
- Advisors
- Hong, Song-Cheolresearcher; 홍성철researcher
- Description
- 한국과학기술원 : 전기및전자공학과,
- Publisher
- 한국과학기술원
- Issue Date
- 1998
- Identifier
- 135249/325007 / 000935176
- Language
- eng
- Description
학위논문(박사) - 한국과학기술원 : 전기및전자공학과, 1998.2, [ [xi], 110 p. ]
- Appears in Collection
- EE-Theses_Ph.D.(박사논문)
- Files in This Item
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