#### Heterojunction bipolar transistor by carbon doping and selective metalorganic chemical vapor deposition = 탄소 도핑과 선택적 유기금속화학증착법을 이용한 이종접합 바이폴라 트랜지스터

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The performance of AlGaAs/GaAs heterojunction bipolar transistor (HBT) are improved by using carbon-doped base and selective metalorganic chemical vapor deposition (S-MOCVD). The characteristics of carbon tetrachloride ($CCl_4$)-doped GaAs and AlGaAs layers grown by atmospheric-pressure MOCVD are investigated by varying the growth parameters. The hole concentrations as high as $7\times10^{19}cm^{-3}$ are obtained and the hole mobility of the carbon-doped GaAs is higher than that obtained from zinc-doped GaAs at high hole concentrations. The dependence of GaAs lattice contraction on the hole concentration is determined from X-ray diffraction at high doping levels ($1\sim7\times10^{19}cm^{-3}$). For carbon-doped base HBT, it is found that the hole concentration of base layer can be nondestructively measured by using double crystal X-ray diffractometer from the relation between the hole concentration and the strain. AuGe/Ni/Au metallization to carbon-doped GaAs is performed in comparison with zinc- and beryllium-doped GaAs and good ohmic contact with specific contact resistance of $3\times10^{-6}Ω㎠$ is achieved. Carbon-doped base AlGaAs/GaAs HBT is fabricated and compared with zinc-doped base device. No carbon diffusion at the emitter-base junction is observed in secondary-ion mass spectroscopy (SIMS) profiles. DC characteristics of the carbon-doped base HBT are better than the zinc-doped base device. For the carbon-doped base HBT the common emitter current gain of 30 and the base current ideality factor of 1.4 are obtained. The current gain cutoff frequency $f_T$ of 27GHz and the maximum oscillation frequency $f_{\max}$ of 16GHz are achieved at the emitter size of 5Ⅹ50μ㎡. Selectively grown AlGaAs/GaAs HBT with a reduced base-collector capacitance is proposed and fabricated by using S-MOCVD. The proposed HBT features a triangular void over $SiO_2$ stripe. The extrinsic base-collector capacitance is significantly reduced due to the isolation of the extrinsic ...
Kwon, Young-Seresearcher권영세researcher
Description
한국과학기술원 : 전기및전자공학과,
Publisher
한국과학기술원
Issue Date
1995
Identifier
99143/325007 / 000885226
Language
eng
Description

학위논문(박사) - 한국과학기술원 : 전기및전자공학과, 1995.2, [ iv, 115 p. ]

URI
http://hdl.handle.net/10203/36269